NOVELTY – The method involves performing laser ablation and PECVD to form the alternate layers of tin-tellurium quantum dot layers and silicon dioxide. USE – For fabricating silicon dioxide and tin-tellurium quantum dot multilayer structure for use in optical connector device. ADVANTAGE – Ensures reduced manufacturing cost since no mechanical, electrical, acoustic or electronic process is used to control light in making the silicon dioxide and tin-tellurium quantum dot multilayer structure. Ensures reduced attenuation loss in the silicon optical fibers used in optical communication due to use of ultra-fast key in predetermined band with silicon dioxide and tin-tellurium quantum dot multilayer structure.
L03 (Electro-(in)organic – chemical features of conductors, resistors, magnets, capacitors and switches, electric discharge lamps, semiconductor and other materials, batteries, accumulators and thermoelectric devices, including fuel cells, magnetic recording media, radiation emission devices, liquid crystals and basic electric elements. Growing of single crystals of semiconductors and their doping are included, but semiconductor devices, where the manufacture is not claimed are excluded. Electrography, electrophotography, magnetography, electrolysis, electrophoresis, power plant, X-ray and plasma-techniques, ion exchange resins, polyelectrolytes, electroplating, metal electrodeposition, electroforming, anodising, electrolytic cleaning, cathodic protection and electrolytic or electrothermic production or refining of metals are all covered elsewhere (Sections G, J, K and M).); U11 (Semiconductor Materials and Processes); U12 (Discrete Devices)