Method for producing intermetallic monocrystalline nanowires, and intermetallic monocrystalline nanowires”

Backlog Microestrutura e Nanotecnologia Química Tecnologia de superfície, Revestimento

Method for producing intermetallic monocrystalline nanowires, and intermetallic monocrystalline nanowires”

NOVELTY – Producing intermetallic monocrystalline nanowires involve submerging porous support in a first acid solution. The porous support is a pure aluminum foil of aluminum. The acid solution contains hydrochloric acid. The porous support is washed with first acid water. The obtained washed porous support is dried. The porous support consists of a cover barrier film. The film is removed by treating the porous support with water. The anode is attached to the bottom of an aluminum pan. The rare earth metal and metals are inserted through the pipe. USE – Method for producing intermetallic monocrystalline nanowires (claimed) used for anodizing process. ADVANTAGE – The method enables to produce intermetallic monocrystalline nanowires in an efficient manner. DETAILED DESCRIPTION – Producing intermetallic monocrystalline nanowires involve submerging porous support in a first acid solution. The porous support is a pure aluminum foil of aluminum. The acid solution contains hydrochloric acid. The porous support is washed with first acid water. The obtained washed porous support is dried. The porous support consists of a cover barrier film. The film is removed by treating the porous support with water. The anode is attached to the bottom of an aluminum pan. The rare earth metal and metals are inserted through the pipe. The tube is removed from the oven and subjected to the frequency of 700Hertz.

Main Application Field

L03 (Electro-(in)organic – chemical features of conductors, resistors, magnets, capacitors and switches, electric discharge lamps, semiconductor and other materials, batteries, accumulators and thermoelectric devices, including fuel cells, magnetic recording media, radiation emission devices, liquid crystals and basic electric elements. Growing of single crystals of semiconductors and their doping are included, but semiconductor devices, where the manufacture is not claimed are excluded. Electrography, electrophotography, magnetography, electrolysis, electrophoresis, power plant, X-ray and plasma-techniques, ion exchange resins, polyelectrolytes, electroplating, metal electrodeposition, electroforming, anodising, electrolytic cleaning, cathodic protection and electrolytic or electrothermic production or refining of metals are all covered elsewhere (Sections G, J, K and M).); M11 (Electroplating; electrolytic treatment of or with metals – including electro-deposition of metals, electro-plating apparatus, electro-forming, electro-erosion, spark erosion, anodising (electrophoretically) coating metals and electrolytic cleaning and polishing (C25).); X25 (Industrial Electric Equipment)

INVENTORS:

PIROTA KLEBER ROBERTO
BÉRON FANNY
DE OLIVEIRA LUIZ AUGUSTO
MOURA KAROLINE
KNOBEL MARCELO
PAGLIUSO PASCOAL JOSÉ GIGLIO
GARITEZI THALES MACEDO
DE JESUS CAMILO BRUNO RAMOS
RETTORI CARLOS
ADRIANO CRIS
ROSA PRISCILA FERRARI SILVEIRA
URBANO RICARDO RODRIGUES
IWAMOTO WELLINGTON AKIRA
ARZUZA LUIS CARLOS
CARVALHO PETERSON

763_NANOFIOS

Patent number: WO2016023089-A1;BR102014019794-A2

PATENT STATUS:

For information contact Inova Unicamp

FOR ADDITIONAL INFORMATION:

parcerias@inova.unicamp.br

+55 (19) 3521-5207 / 2607

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